標題: | 460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing |
作者: | Chang, Chia-Ta Hsiao, Shih-Kuang Chang, Edward Yi Hsiao, Yu-Lin Huang, Jui-Chien Lu, Chung-Yu Chang, Huang-Choung Cheng, Kai-Wen Lee, Ching-Ting 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | Edge threading dislocations;light-emitting diodes (LEDs);patterned sapphire;submicrometer |
公開日期: | 1-十月-2009 |
摘要: | This letter investigates 460-nm InGaN-based light-emitting diodes (LEDs) grown on a hemisphere-shape-patterned sapphire substrate (HPSS) with submicrometer spacing. The full-width at half-maximum of the (102) plane rocking curves for GaN layer grown on a conventional sapphire substrate (CSS) and HPSS are 480 and 262 arcsec, respectively. Such improvement is due to the reduction of the pure edge threading dislocations. At the forward current of 20 mA, the light output power of the LEDs grown on CSS and HPSS were 4.05 and 5.86 mW, respectively. This improvement of 44% light-output power can be attributed to the improved quality of the material and the increase of the light extraction by the fully inclined facets of the HPSS. |
URI: | http://dx.doi.org/10.1109/LPT.2009.2026728 http://hdl.handle.net/11536/6615 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2009.2026728 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 21 |
Issue: | 19 |
起始頁: | 1366 |
結束頁: | 1368 |
顯示於類別: | 期刊論文 |