Improved Performance of AlGaInP LEDs by a Periodic GaP-Dish Mirror Array

doi:10.1109/LPT.2009.2028238

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, Ping-Wei	en_US
dc.contributor.author	Wu, Yew Chung Sermon	en_US
dc.date.accessioned	2014-12-08T15:08:37Z	-
dc.date.available	2014-12-08T15:08:37Z	-
dc.date.issued	2009-10-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2009.2028238	en_US
dc.identifier.uri	http://hdl.handle.net/11536/6616	-
dc.description.abstract	A periodic GaP-dish mirror structure was introduced into AlGaInP light-emitting diodes (LEDs) through wet etching and Si wafer bonding process. It was found that the performance of these GaP-dish LEDs was better than that of conventional LED transferred to Si substrate (LED-C). In addition, the output power of GaP-dish LEDs was increased with the decrease of GaP-dish diameter. When the GaP-dish diameter decreased to 3 mu m, the output power reached 2.2 mW, which was two times higher than that of LED-C.	en_US
dc.language.iso	en_US	en_US
dc.subject	AlGaInP	en_US
dc.subject	dish	en_US
dc.subject	light-emitting diode (LED)	en_US
dc.subject	mirror	en_US
dc.title	Improved Performance of AlGaInP LEDs by a Periodic GaP-Dish Mirror Array	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2009.2028238	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	21	en_US
dc.citation.issue	19	en_US
dc.citation.spage	1441	en_US
dc.citation.epage	1443	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000270037200015	-
dc.citation.woscount	2	-
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