使用溶膠凝膠法製備之鈣鈦礦結構氧化物薄膜之雙穩態導電率轉換記憶體元件

Abstract

本論文探討之溶膠凝膠法製備鈣鈦礦結構氧化物薄膜之雙穩態導電率轉換記憶體元件。是由鋯酸鍶摻雜釩、鉬、鎘不同的過渡元素摻雜物所產生的一種非揮發性電阻式記憶體元件。以鋁作為頂電極、鎳酸鑭作為底電極。具有簡單的MIM電路結構、快速的轉態時間、低的轉態電壓、高的辨別率、小尺寸、耗電量少、與極為穩定的電性特性，具有成為未來新一代的非揮發性記憶體產品的潛力。 在這篇碩士論文中，一開始首先介紹鈣鈦礦結構與溶膠凝膠法的優缺點。接著討論到實驗中其分析的儀器設備與方法。在實驗結果中，首先討論的是物性分析。其中包含了：熱分析、X光薄膜分析、掃瞄式電子顯微鏡分析。而在電性分析方面：探討了轉態的電流與電壓關係圖、其漏電機制、快速退火的氣氛與溫度對電流的影響、電流與溫度的關係。接下來也討論了有關脈衝電壓的大小與漏電流的關係、轉態所需的速度與極性對漏電流相對應的影響。

The bistable conductivity switching memory device using perovskite oxide thin films by sol-gel method in this thesis is a non-volatile RRAM memory device which is V, Mo, Cr doped SrZrO3. The top electrode is aluminum and bottom electrode is LaNiO3. The memory device has the simple device structure, MIM, high switching speed, low switching voltage, easy to define the H/L state, small size, low power consumption, and stable electric properties, making itself to be one of the candidates of new generation non-volatile memories. At the first chapter of this thesis, we introduce the perovskite structure and the advantages of sol-gel. Then, the experiment equipment and method will be introduced. In the experiment results, the physical properties will be discussed at first, including the thermal analysis, XRD, SEM. The electrical properties will include the switching current vs. bias voltage, the mechanism of leakage current,the effect of RTA temperature and ambience, the retention and temperature, the effect of pulse voltage height to leakage current, and the effect of switching speed, polarity to the leakage current.