以氟化氪準分子雷射濺鍍成長AgGaS2薄膜之光學及結構性質研究

Abstract

本研究是以氟化氪準分子雷射濺鍍成AgGaS2薄膜於石英玻璃基板上。我們由X光繞射及光激光譜量測可以得知退火過程對薄膜性質的影響。由變溫量測光激光光譜，我們得到淺層施子的束縛能。熱應力所造成的影響我們可以由拉曼A1模及激子能量平移而得。由穿透光譜的量測，換算成吸收曲線可以得到A激子以及B,C激子的能量值。此結果與先前的報導相符合。

In this study, we have grown the AgGaS2 thin films on quartz glass substrates by KrF excimer laser deposition. The influence of annealing on these films has been investigated by X-ray diffraction and photoluminescence measurement. From the temperature dependent photoluminescence spectra we have determined the binding energy of the shallow donors. The effect of the thermal strain was considered from the shifts of the A1 Raman mode and the exciton energy. The absorption spectra exhibits two maxima at which the photon energies correspond to those of A and B/C excitons, respectively. The results agree well with previous reports