完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, Y. H. | en_US |
dc.contributor.author | Chang, Li | en_US |
dc.contributor.author | Lin, P. Y. | en_US |
dc.contributor.author | Chiang, C. H. | en_US |
dc.contributor.author | Chen, J. F. | en_US |
dc.contributor.author | Chi, T. W. | en_US |
dc.date.accessioned | 2014-12-08T15:08:42Z | - |
dc.date.available | 2014-12-08T15:08:42Z | - |
dc.date.issued | 2009-09-21 | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0022-3727/42/18/185106 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6665 | - |
dc.description.abstract | In this work, we investigated the effect of a 1 nm thick GaAs(94.3)Sb(0.57) buffer layer on structural and optical properties of buried InAs quantum dots (QDs) and wetting layers (WLs) in GaAs using photoluminescence (PL) and transmission electron microscopy (TEM). The density and emission wavelength of the QDs on the buffer were increased due to the size and the shape modification in comparison with those without a buffer. PL analysis of the ground-state (GS) peak of the QDs on the buffer showed a red-shift of 18 meV with an enhanced intensity. In addition, PL and TEM show that the buffer has a weak effect on the WLs and no apparent changes occur for the buffer during QD deposition and the capping process. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0022-3727/42/18/185106 | en_US |
dc.identifier.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | en_US |
dc.citation.volume | 42 | en_US |
dc.citation.issue | 18 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000269557000027 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |