Si(100)-c(4×4)表面台階附近原子排列的研究

Abstract

本文主要研究Si(100)-c(4×4)表面台階附近原子的排列。觀察c(4×4)排列的週期性，對Si(100)-c(4×4)台階做出所有可能的排列組合時，得到台階附近原子排列的可能性多達32種，而分析斷鍵的密度與藉由穿隧式顯微鏡所得的的影像來找出Si(100)-c(4×4)的台階原子的真正排列狀況是本文重點，最後我們得到Si(100)-c(4×4)表面台階的組合共有四種情形。

This work studied on the atomic arrangements around the steps of Si(100)-c(4x4) surface. Due to the geometric period of Si(100)-c(4×4), there were 32 possible atomic arrangements near the steps . This study analyzed the density of dangling bonds. We also used atomic resolved images obtained by the scanning tunneling microscopy to identify the real surface structures. Based on the combined information that we analyses our model and the real-space STM images, we concluded that there are only four types of arrangements around the steps of Si(100)-c(4x4) surface.