完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, Shih-Yung | en_US |
dc.contributor.author | Horng, Ray-Hua | en_US |
dc.contributor.author | Shi, Jin-Wei | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Wuu, Dong-Sing | en_US |
dc.date.accessioned | 2014-12-08T15:08:43Z | - |
dc.date.available | 2014-12-08T15:08:43Z | - |
dc.date.issued | 2009-09-15 | en_US |
dc.identifier.issn | 0733-8724 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JLT.2009.2022283 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6673 | - |
dc.description.abstract | High-performance InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) with a plating Cu substrate for plastic optical fiber communication applications are reported. Good stability of emission wavelength was obtained at 0.016 nm/mA. The RCLEDs presents low temperature dependence, showing only a 3% drop in light output power as the temperature increasing from 25 to 85 degrees C. The superior performance can be attributed to the decreased dynamic series resistance and the enhanced thermal dissipation of the heat sink substrate. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | InGaN | en_US |
dc.subject | optical fiber | en_US |
dc.subject | resonant-cavity light-emitting diode (RCLED) | en_US |
dc.title | High-Performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for Plastic Optical Fiber Applications | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JLT.2009.2022283 | en_US |
dc.identifier.journal | JOURNAL OF LIGHTWAVE TECHNOLOGY | en_US |
dc.citation.volume | 27 | en_US |
dc.citation.issue | 18 | en_US |
dc.citation.spage | 4084 | en_US |
dc.citation.epage | 4090 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000269214900003 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |