標題: | Grain-size-related transient terahertz mobility of femtosecond-laser-annealed polycrystalline silicon |
作者: | Wang, Y. -C. Ahn, H. Chuang, C. -H. Ku, Y. -P. Pan, C. -L. 光電工程學系 Department of Photonics |
公開日期: | 1-九月-2009 |
摘要: | We investigated carrier-relaxation dynamics of femtosecond laser annealed (FLA) polycrystalline silicon (poly-Si). The correlation between morphology and electrical properties of poly-Si after femtosecond laser annealing is elucidated by optical-pump-terahertz-probe and terahertz time-domain spectroscopies. The transient conductivities of FLA-processed poly-Si with large (similar to 500 nm) and small (similar to 50 nm) grain sizes were both well fitted by the Drude model in the terahertz regime from 0.4 to 2 THz. The transient mobilities of these materials were determined to be 175 +/- 19.4 and 94.5 +/- 20.2 cm(2)/V s, respectively. After annealing, reduction of deep-state density rather than tail-state density in large-grain poly-Si is responsible for its higher mobility. |
URI: | http://dx.doi.org/10.1007/s00340-009-3580-2 http://hdl.handle.net/11536/6693 |
ISSN: | 0946-2171 |
DOI: | 10.1007/s00340-009-3580-2 |
期刊: | APPLIED PHYSICS B-LASERS AND OPTICS |
Volume: | 97 |
Issue: | 1 |
起始頁: | 181 |
結束頁: | 185 |
顯示於類別: | 期刊論文 |