低溫複晶矽薄膜電晶體之研究

Abstract

我們提出了以電子束回火及自行對準矽化鎳的技術，來提升低溫複晶矽薄膜電晶體的特性。 就電子束回火而言，它是在室溫的基版溫度下操作，並且只需要數分鐘的時間。和傳統的爐管回火相比，電子束回火可大幅減低回火溫度和減少回火時間，此外，還可以得到較大的複晶矽顆粒及較佳的元件特性。因此，就未來強調低溫製程的玻璃基版高畫質顯示器或甚至塑膠基版的應用而言，電子束回火可說深具潛力。 就矽化鎳的技術而言，矽化反應後的複晶矽片電阻可減少兩個數量級。藉由在源極/汲極的接觸窗及閘電極形成自行對準的矽化鎳，薄膜電晶體的臨界電壓，汲極電流及載子遷移率均大幅增加。因此，只需單一4000C，30秒鐘回火步驟的自行對準矽化鎳製程技術，對提升低溫複晶矽薄膜電晶體的特性而言，是一個簡單而且有效的方法。

We have proposed both electron beam annealing and Ni-salicidation techniques to improve the performance of low-temperature poly-Si TFT's. For E-beam annealing, it is performed at room substrate temperature and only takes several minutes. Compared with conventional furnace annealing, both crystallization temperature and annealing duration are vastly decreased by E-beam annealing. Furthermore, larger poly-Si grains and superior device characteristics could be obtained. Therefore, E-beam annealing has high potential for future low thermal budget high-resolution display on glass or even plastic substrate application. For silicidation technique, the sheet resistance of Ni-silicided polysilicon is observed to be reduced by two orders of magnitude. By forming self-aligned NiSi at source/drain contacts and gate electrode, the threshold voltage, drain current and carrier mobility of TFT's are greatly improved. Therefore, the Ni-salicidation process of just one-step 4000C, 30sec annealing is a simple and effective method to enhance low-temperature poly-Si TFT's performance.