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| Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al(2)O(3) Gate Dielectric | 107 |
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| Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al(2)O(3) Gate Dielectric | 107 |
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| 中國 | 90 |
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