高鍺矽鍺之矽鎳化合物

Abstract

我們做了在矽鍺/矽（Si0.3Ge0.7/Si）基板上的金屬矽鍺化合物的研究，在此論文中作為金屬矽鍺化合物的金屬為鎳(Ni)與鈷(Co)。我們發現鎳金屬矽鍺化合物(Ni germano silicide)的片電阻可以在P+/N及N+/P的接面達到4-6歐姆/正方(4-6□/□)。 這個值遠比鈷金屬矽鍺化合物(Co germano silicide)小， 除此之外， 鎳金屬矽鍺化合物(Ni germano silicide) 在P+/N及N+/P接面的漏電流亦可以分別達到3□10-8 安培/公分平方與2□10-7 安培/公分平方( 3□10-8 A/cm2 and 2□10-7 A/cm2)如此低的電流密度。如此好的特性是歸因於相當平整的鎳金屬矽鍺化合物。

We have studied the Ni and Co germano-silicide on Si0.3Ge0.7/Si. The Ni germano-silicide shows a low sheet resistance of 4-6 □/□ on both P+N and N+P junctions, which is much smaller than Co germano-silicide. Besides, small junction leakage currents of 3□10-8 A/cm2 and 2□10-7 A/cm2 are obtained for Ni germano-silicide on P+N and N+P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM.