La2O3/Si0.3Ge0.7 p-MOSFETs and Ni germano-silicide

標題:	La2O3/Si0.3Ge0.7 p-MOSFETs and Ni germano-silicide
作者:	Huang, CH Lin, CY Li, HY Chen, WJ Chin, A Mei, P 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2003
摘要:	We have used Si0.3Ge0.7 to improve the hole mobility of La2O3 p-MOSFETs. A hole mobility of 55 cm(2)/V's in nitrided La2O3/Si0.3Ge0.7 p-MOSFET is measured and 1.8 times higher than the 31 cm(2)/V-s mobility in nitrided La2O3/Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/rectangle and small junction leakage currents of 3x10(-8) A/cm(2) and 2x10(-7) A/cm(2) for respective P+N and N+P junctions.
URI:	http://hdl.handle.net/11536/18559 http://dx.doi.org/10.1109/VTSA.2003.1252550
ISBN:	0-7803-7765-6
DOI:	10.1109/VTSA.2003.1252550
期刊:	2003 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS
起始頁:	52
結束頁:	55
顯示於類別：	會議論文

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