Diode-pumped passively mode-locked 1342 nm Nd:YVO(4) laser with an AlGaInAs quantum-well saturable absorber

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, S. C.	en_US
dc.contributor.author	Cheng, H. L.	en_US
dc.contributor.author	Chen, Yi-Fan	en_US
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.date.accessioned	2014-12-08T15:09:01Z	-
dc.date.available	2014-12-08T15:09:01Z	-
dc.date.issued	2009-08-01	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.34.002348	en_US
dc.identifier.uri	http://hdl.handle.net/11536/6871	-
dc.description.abstract	We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd:YVO(4) laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated. (C) 2009 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Diode-pumped passively mode-locked 1342 nm Nd:YVO(4) laser with an AlGaInAs quantum-well saturable absorber	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.34.002348	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	15	en_US
dc.citation.spage	2348	en_US
dc.citation.epage	2350	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
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