表面處理和導電鍍膜對CRT螢光粉發光效率的影響

Abstract

本論文探討如何將CRT螢光粉應用於低壓場發射顯示器，其中將會遭遇兩個主要的問題，一個是螢光粉表面的非發光層以及螢光粉本身的高電阻率的問題。其中螢光粉的高電阻率會在表面產生charging-up現象，因此利用InCl3的水解反應產生In2O3的特性，來降低螢光粉本身的高電阻率以求達到改善其在低壓的發光特性。而螢光粉表面的非發光層，則是利用酸性濃液蝕刻螢光粉來去除，進而達到提昇螢光粉的發光效率。而經過處理後的螢光粉在鍍上ITO基板時，沉積厚度也要達到最佳化，以達到大幅改善CRT螢光粉應用於低壓場發射顯示器的發光特性。

An investigation of the CRT phosphors are applied to FED phosphors at low voltage. Two main obstacles are surface dead layer of phosphor surface and high resistivity of phosphor. The high resistivities of CRT phosphors result in charging-up on the surfaces. In this research, hydrolysis of InCl3 reacts to In2O3 is utilized to reduce high resistivities of CRT phosphors and improve the low voltage cathodoluminescent properties. The surface dead layer of phosphor is etched with an aqueous solution of acid. The deposited phosphors after the same treatment on ITO glass reach optimum deposition thickness and increase efficiency of CRT phosphors. The low-voltage cathodoluminescent characteristics are drastically improved. We also do some theoretical calculations to explain experimental results by some publishing papers.