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dc.contributor.author吳漢傑en_US
dc.contributor.authorJonathan Wuen_US
dc.contributor.author黃遠東en_US
dc.contributor.author桂正楣en_US
dc.contributor.authorYang-Tung Huangen_US
dc.contributor.authorCheng-May Kweien_US
dc.date.accessioned2014-12-12T02:28:12Z-
dc.date.available2014-12-12T02:28:12Z-
dc.date.issued2001en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT900428080en_US
dc.identifier.urihttp://hdl.handle.net/11536/68772-
dc.description.abstract本論文研究抗諧振反射光波導結構之多模干涉式分光元件並探討最佳化設計。應用多層膜理論和有效折射係數法來分析及設計抗諧振反射光波導結構,然後利用波束傳輸法 (Beam Propagation Method) 來模擬抗諧振反射光波導之多模干涉式分光元件。利用這些分析方法設計了在垂直方向為抗諧振反射光波導結構的多模干涉式分光元件,其材料分別為矽及二氧化矽。因此元件可以應用在以矽為基底的積體光學晶片上。在論文□分別設計了1×2、1×4和2×2三種抗諧振反射光波導之多模干涉式分光元件並且模擬其輸出結果。最後利用多加了一層侷限層的方法及微調元件的長度達到最佳化設計的目的。1×2分光元件的損耗為0.0087dB;1×4分光元件的損耗為0.0174dB,分光波道間之不均勻度差為0.0546dB;2×2分光元件的損耗為0.0436dB,分光波道間之不均勻度差為0.0597dB,最佳化設計後之結果均較原設計時之結果為佳。zh_TW
dc.description.abstractIn this thesis, we investigate the ARROW-based MMI power dividers. The multilayer theory and Effective Index Method are used to analyze the ARROW structures. Then the Beam Propagation Method is used to simulate the performance of the ARROW-based MMI power dividers. Using these analyzing methods, we design the MMI power dividers with ARROW structures in the vertical direction. The materials are Si and SiO2. The devices are suitable for integrated optic circuits on a Si substrate. 1×2, 1×4, and 2×2 ARROW-based MMI power dividers are designed. The optimal design can be obtained by adjusting lateral cladding thickness and the device length. The loss of 1×2 power divider is achieved to be 0.0087dB; the loss of 1×4 power divider is 0.0174dB and the imbalance is 0.0546dB; the loss of 2×2 power divider is 0.0436dB and the imbalance is 0.0597dB. The results based on optimal design are all better than original ones.en_US
dc.language.isoen_USen_US
dc.subject抗諧振反射光波導zh_TW
dc.subject多模干涉式分光元件zh_TW
dc.subjectARROWen_US
dc.subjectMMIen_US
dc.title抗諧振反射光波導結構之多模干涉式分光元件之最佳化設計zh_TW
dc.titleThe Optimal Design of ARROW-Based MMI Power Dividersen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
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