氧化鋁奈米孔洞的製備與其電化學性質之探討

Abstract

具有良好陣列之氧化鋁奈米孔洞可由控制良好的陽極處理條件獲得◦本研究使用高純度鋁塊材(99.999%)先經過攝氏570度退火處理, 先經機械拋光到拋光粉0.03μm, 再進行電解拋光, 反應條件為40 volts,在過氯酸(15%)-乙醇(70%)-單丁醚乙醇(HOCH2CH2OC4H9)(15%) 混合溶液中, 攝氏12度的環境下拋光11分鐘◦ 然後再放至攝氏8度與外加電壓為18volts的10%硫酸溶液中進行氧化鋁奈米孔洞的生長反應, 歷時為1至24小時◦ 其結果由SEM觀察得知, 我們所得到的奈米孔洞的直徑約為30奈米, 介面層的半球狀barrier layer直經約為50奈米;本實驗的成品可獲得具陣列氧化鋁基板且厚度可以達到150μm. 之後再利用本實驗得到之氧化鋁奈米孔洞基板與真空熱壓注系統, 加以理論計算所需之壓力值,可應用模板的技術得到低熔點之奈米金屬線◦

AAO (Anodic Alumina Oxide) in good array could be obtained under the well-controlled anodizing conditions. In this study, specimens of high purity (99.999%) aluminum were used and proceeded full-annealing process at 570˚C for two hours firstly. Then underwent a mechanical polishing to 0.03μm, and one more electropolishing at 40volts in a perchloric acid (15%) – ethanol (70%) – monobutylether (HOCH2CH2OC4H9) (15%) bath under stirring at 12oC for 11 min. An electropolished specimen anodized to 18volts in 10% sulphuric acid electrolyte at 8oC to form nanoporous AAO. The topography of AAO was observed by SEM. The diameter of nanochannels was about 30nm, and the hemisphere size of barrier layer was approximately 50nm. Comparing with the commercial AAO, AAO formed in our lab were arrayed, and the length could reach 150μm. Furthermore, the AAO was utilized to fabricate Bi nanowires by vacuum melting injection process. According to the theoretical calculations, the expected nanowires could be gained by template technique.