共軛高分子在發光二極體與場效電晶體之整合

Abstract

本文的目的是為了在實驗上進一步將高分子半導體之發光二極體與電晶體結合，並探討其個別的基本特性。不同於其他實驗室的是我們結構中的LED與FET共享同一半導體層，並由單一旋轉塗佈製成。如此一來，免除了製程上高分子聚合物需要限制區域性(polymer pattering)的困難，也能順利發展於平面顯示器的應用上。我們也開始從適合當電晶體載子傳輸層的高分子聚合物中搜尋條件符合當發光二極體中電洞傳輸層(能夠降低電洞由陽極金屬進入發光層半導體的能障)的可能材料，在測試過程中，發現具有高遷移率的P3HT也同時符合當電洞傳輸層的條件，於是在製程上，將PLED中的電洞傳輸層與電晶體中的載子傳輸層使用同一種材料：P3HT，文中詳細的探討了P3HT在PLED中的基本特性，由實驗結果得知，只要甩上一層P3HT後再甩上一發光層，即能順利由電晶體所提供的較高電流來驅動以P3HT為電洞傳輸層的發光二極體。

The thesis is aimed at integration of polymer optoelectronic and electronic devices. We tried to combine both thin-film transistor (TFT) and polymer light emitting diodes (PLED) and study their basic characteristics respectively. But the LED and FET structure share the same semiconductor layer, avoiding the difficulties of polymer pattering .We search for the possible materials suitable simultaneously for carrier transport layer in TFT and the hole-transport layer (HTL) ,which decreases the hole injection barrier from the anode to emission layer in PLED. We find Poly(3-hexylthiophe) is a good choice. And we will discuss the characteristics of PLED using as HTL .Due to the high horizontal mobility of P3HT in thin-film transistor ,the TFT can provide enough current to drive the PLED .