完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, C. C. | en_US |
dc.contributor.author | Hsu, Lun-Hao | en_US |
dc.contributor.author | Rern, Kai | en_US |
dc.contributor.author | Cheng, Y. T. | en_US |
dc.contributor.author | Hsieh, Yi-Fan | en_US |
dc.contributor.author | Wu, Pu-Wei | en_US |
dc.date.accessioned | 2014-12-08T15:09:10Z | - |
dc.date.available | 2014-12-08T15:09:10Z | - |
dc.date.issued | 2009-07-01 | en_US |
dc.identifier.issn | 1536-125X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TNANO.2009.2023320 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6997 | - |
dc.description.abstract | This letter presents a seeding control scheme by utilizing gravity force to form an agglomeration of molten Co seeds on a patterned inverted silicon nanopyramid. Nanometer sized molten Co seeds formed on a nonwettable inverted pyramid surface can roll along the inclination followed by aggregation to form a singular seed with the size depending on the pyramid size and the thickness of as-deposited Co film inside the pyramid. The proposed scheme allowing the formation of well-aligned catalytic seeds with manipulated size will promise the control growth of 1-D material for practical integrated microelectronic device fabrication. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | 1-D material | en_US |
dc.subject | 3D-IC | en_US |
dc.subject | gravity-assisted | en_US |
dc.subject | integrated nanoelectronic circuit | en_US |
dc.subject | seeding control | en_US |
dc.title | Gravity-Assisted Seeding Control for 1-D Material Growth | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TNANO.2009.2023320 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON NANOTECHNOLOGY | en_US |
dc.citation.volume | 8 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 427 | en_US |
dc.citation.epage | 430 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000268170900001 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |