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dc.contributor.authorChen, C. C.en_US
dc.contributor.authorHsu, Lun-Haoen_US
dc.contributor.authorRern, Kaien_US
dc.contributor.authorCheng, Y. T.en_US
dc.contributor.authorHsieh, Yi-Fanen_US
dc.contributor.authorWu, Pu-Weien_US
dc.date.accessioned2014-12-08T15:09:10Z-
dc.date.available2014-12-08T15:09:10Z-
dc.date.issued2009-07-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2009.2023320en_US
dc.identifier.urihttp://hdl.handle.net/11536/6997-
dc.description.abstractThis letter presents a seeding control scheme by utilizing gravity force to form an agglomeration of molten Co seeds on a patterned inverted silicon nanopyramid. Nanometer sized molten Co seeds formed on a nonwettable inverted pyramid surface can roll along the inclination followed by aggregation to form a singular seed with the size depending on the pyramid size and the thickness of as-deposited Co film inside the pyramid. The proposed scheme allowing the formation of well-aligned catalytic seeds with manipulated size will promise the control growth of 1-D material for practical integrated microelectronic device fabrication.en_US
dc.language.isoen_USen_US
dc.subject1-D materialen_US
dc.subject3D-ICen_US
dc.subjectgravity-assisteden_US
dc.subjectintegrated nanoelectronic circuiten_US
dc.subjectseeding controlen_US
dc.titleGravity-Assisted Seeding Control for 1-D Material Growthen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNANO.2009.2023320en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume8en_US
dc.citation.issue4en_US
dc.citation.spage427en_US
dc.citation.epage430en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000268170900001-
dc.citation.woscount0-
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