完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, Wei | en_US |
dc.contributor.author | Su, Pin | en_US |
dc.date.accessioned | 2014-12-08T15:09:10Z | - |
dc.date.available | 2014-12-08T15:09:10Z | - |
dc.date.issued | 2009-07-01 | en_US |
dc.identifier.issn | 1536-125X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TNANO.2009.2014865 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6998 | - |
dc.description.abstract | This paper provides a comparative study of carrier transport characteristics for multiple-gate silicon-on-insulator MOSFETs with and without the nonoverlapped source/drain structure. For the overlapped devices, we observed Boltzmann law in subthreshold characteristics and phonon-limited behavior in the inversion regime. For the nonoverlapped devices, however, we found insensitive temperature dependence for drain current in both subthreshold and inversion regimes. Our low-temperature measurements indicate that the intersubband scattering is the dominant carrier transport mechanism for narrow overlapped multigate field-effect transistors (MuGFETs). For the nonoverlapped MuGFETs, the voltage-controlled potential barriers in the nonoverlapped regions may give rise to the weak localization effect (conductance reduction) and the quantum interference fluctuations. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Carrier transport | en_US |
dc.subject | MOSFET | en_US |
dc.subject | multiple-gate | en_US |
dc.subject | nonoverlapped | en_US |
dc.subject | overlapped | en_US |
dc.title | A Comparative Study of Carrier Transport for Overlapped and Nonoverlapped Multiple-Gate SOI MOSFETs | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TNANO.2009.2014865 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON NANOTECHNOLOGY | en_US |
dc.citation.volume | 8 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 444 | en_US |
dc.citation.epage | 448 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000268170900004 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |