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dc.contributor.authorSahoo, Kartika Chandraen_US
dc.contributor.authorLin, Men-Kuen_US
dc.contributor.authorChang, Edward-Yien_US
dc.contributor.authorLu, Yi-Yaoen_US
dc.contributor.authorChen, Chun-Chien_US
dc.contributor.authorHuang, Jin-Huaen_US
dc.contributor.authorChang, Chun-Weien_US
dc.date.accessioned2014-12-08T15:09:12Z-
dc.date.available2014-12-08T15:09:12Z-
dc.date.issued2009-07-01en_US
dc.identifier.issn1931-7573en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11671-009-9297-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/7020-
dc.description.abstractWe have developed a simple and scalable approach for fabricating sub-wavelength structures (SWS) on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma (ICP) ion etching. Silicon nitride SWS surfaces with diameter of 160-200 nm and a height of 140-150 nm were obtained. A low reflectivity below 1% was observed over wavelength from 590 to 680 nm. Using the measured reflectivity data in PC1D, the solar cell characteristics has been compared for single layer anti-reflection (SLAR) coatings and SWS and a 0.8% improvement in efficiency has been seen.en_US
dc.language.isoen_USen_US
dc.subjectSub-wavelength Structureen_US
dc.subjectSolar cellen_US
dc.subjectSWS fabricationen_US
dc.subjectReflectanceen_US
dc.subjectAnti-reflective coatingsen_US
dc.titleFabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11671-009-9297-7en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume4en_US
dc.citation.issue7en_US
dc.citation.spage680en_US
dc.citation.epage683en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000266584900013-
dc.citation.woscount26-
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