High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO(2)/ZrO(2) Insulators

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, S. H.	en_US
dc.contributor.author	Chiang, K. C.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.date.accessioned	2014-12-08T15:09:13Z	-
dc.date.available	2014-12-08T15:09:13Z	-
dc.date.issued	2009-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2009.2022775	en_US
dc.identifier.uri	http://hdl.handle.net/11536/7033	-
dc.description.abstract	We have fabricated high-kappa Ni/TiO(2)/ZrO(2)/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 x 10(-8) A/cm(2) at 125 degrees C was obtained with a high 38-fF/mu m(2) capacitance density and better than the ZrO(2) MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO(2)/ZrO(2) devices to decrease the leakage current and to a higher kappa value of 58 for TiO(2) as compared with that of ZrO(2) to preserve the high capacitance density.	en_US
dc.language.iso	en_US	en_US
dc.title	High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO(2)/ZrO(2) Insulators	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2009.2022775	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	30	en_US
dc.citation.issue	7	en_US
dc.citation.spage	715	en_US
dc.citation.epage	717	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
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