矽奈米線的新穎製程研究

Abstract

奈米尺度的結構在近幾年來都被廣範的研究探討著，然而電子束微影技術(Electron-Beam Lithography)和掃描探針微影術(scanning probe lithography) 是目前最常用來做圖樣產生的方法，其中掃描探針微影術(scanning probe lithography)是一新興之技術，以臨近樣品表面的探針引致局部陽極氧化反應(掃描探針氧化反應，scanning probe oxidation)，且具備簡單性、普遍性與低成本等優點，被視為發展奈米元件的關鍵技術。 我們介紹一個新的做矽奈米線的方法。成功的在矽晶圓上做奈米線後，我們做出Nitride的spacer，用以保護奈米線被氧化掉。這樣，我們就可以藉由氧化將奈米線絕緣掉，奈米線的大小也可藉由很穩定的掃描探針微影術、KOH的晶向選擇性蝕刻和傳統的製程技術被控制著，最後在Nitride剝除掉後，就可以量出電性。在這電性中我們亦發現負電阻和電導振盪的現象。我們試著提出一個可能的原因。

Nanometer scale structures and nano-fabrication technology have been widely studied recently. Electron-beam lithography (EBL) and scanning probe lithography (SPL) are the mostly used method for pattern generation. SPL, employing a proximal probe to induce local anodic oxidation (so-called scanning probe oxidation), provide the advantage of simplicity, generality and low cost. It has been considered as a crucial technology for nanometer scale structures. A new technique for generating SiNW was investigated in this thesis. With AFM lithography and conventional processes, we can easily fabricate the SiNW on bare silicon wafer. Silicon nitride spacer is used to protect SiNW from oxidation. Then, the SiNW would isolation from the bulk. The dimension of SiNW would be controllable by these stable conventional processes. After the Si3N4 removed, the SiNW was maked. The electrical characteristic of SiNW was measured. Negative resistance and conductance oscillation properties could be observed in the SiNW. We try to propose a possible model for the phenomenon.