標題: p-Doped p-phenylenediamine-substituted fluorenes for organic electroluminescent devices
作者: Gao, Zhi Qiang
Xia, Ping Fan
Lo, Pik Kwan
Mi, Bao Xiu
Tam, Hoi Lam
Wong, Man Shing
Cheah, Kok Wai
Chen, Chin H.
友訊交大聯合研發中心
D Link NCTU Joint Res Ctr
關鍵字: Fluorene;p-Phenylenediamine;Hole injection material;Organic electroluminescent devices;Hole transporting materials
公開日期: 1-Jul-2009
摘要: Two novel p-phenylenediamine-substituted fluorenes have been designed and synthesized. Their applications as hole injection materials in organic electroluminescent devices were investigated. These materials show a high glass transition temperature and a good hole-transporting ability. It has been demonstrated that the 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) doped p-phenylene-diamine-substituted fluorenes, in which F4-TCNQ acts as p-type dopant, are highly conducting with a good hole-transporting property. The organic light emitting devices (OLEDs) utilizing these F4-TCNQ-doped materials as a hole injection layer were fabricated and investigated. The pure Alq(3)-based OLED device shows a current efficiency of 5.2 cd/A at the current density of 20 mA/cm(2) and the operation lifetime is 1500 h with driving voltage increasing only about 0.7 mV/h. The device performance and stability of this hole injection material meet the benchmarks for the commercial requirements for OLED materials. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2009.02.025
http://hdl.handle.net/11536/7066
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2009.02.025
期刊: ORGANIC ELECTRONICS
Volume: 10
Issue: 4
起始頁: 666
結束頁: 673
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