CMOS螺旋電感等效電路之研討

Abstract

本論文將詳細討論CMOS螺旋電感物理特性，及利用物理特性建立CMOS螺旋電感等效電路與計算公式，然後比較模擬與量測結果之差異。接著討論在CMOS螺旋電感等效電路中每一個元件對於品質因子的影響，進一步利用二氧化矽層蝕刻去改善品質因子，最後利用電磁模擬軟體討論電感耦合的問題。

This thesis will discuss the physical characteristic of CMOS spiral inductors on Si substrate. Equivalent circuit and empirical formulas are established. The calculated results are compared with those obtained by the HFSS simulation and measurements. The influence of each component in the equivalent circuit model on the quality factor Q is also discussed. The Q factor is improved by etching the oxidized Si layer, and the improvement is reported. Finally, the coupling on proximity effects of two adjacent inductors are also studied by the EM simulation software package.