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dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChou, Yi-Tehen_US
dc.contributor.authorTeng, Li-Fengen_US
dc.date.accessioned2014-12-08T15:09:18Z-
dc.date.available2014-12-08T15:09:18Z-
dc.date.issued2009-06-15en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3155507en_US
dc.identifier.urihttp://hdl.handle.net/11536/7106-
dc.description.abstractThe study investigated the photoreaction behavior of amorphous indium-zinc oxide thin film transistor (a-IZO TFT), which was thought to be insensitive to visible light. The obvious threshold voltage shift was observed after light illumination, and it exhibited slow recovery while returning to initial status. The photoreaction mechanism is well explained by the dynamic equilibrium of charge exchange reaction between O(2(g)) and O(2) in a-IZO layer. A charge pumping technique is used to confirm the mechanism and accelerate recoverability. Using knowledge of photoreaction behavior, an operation scheme of photosensing elements consist of a-IZO TFT is also demonstrated in this work.en_US
dc.language.isoen_USen_US
dc.subjectamorphous semiconductorsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectindium compoundsen_US
dc.subjectoptical sensorsen_US
dc.subjectsemiconductor thin filmsen_US
dc.subjectthin film sensorsen_US
dc.subjectthin film transistorsen_US
dc.subjectwide band gap semiconductorsen_US
dc.subjectzinc compoundsen_US
dc.titleCharge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3155507en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.citation.issue24en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000267166600037-
dc.citation.woscount23-
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