離子佈植型與氧化侷限型砷化鎵面射型雷射之製程與特性研究

Abstract

本論文主要是研究砷化鎵垂直共振腔面射型雷射的的製程技術與特性研究。用於此研究的雷射有兩種不同的結構：一是氧化型電流侷限結構，一是氫離子佈植型電流侷限結構。 在製程方面，我們已建立氫離子佈植電流侷限面射型雷射之製程技術，包括曝光時間、顯影時間、電極材料、氫離子佈植能量，以及氧化侷限型面射型雷射之製程技術，包括氧化溫度、氮氣流量、水溫及氧化時間，並成功地製作出兩種不同侷限結構的面射型雷射，其中氧化侷限型面射型雷射在室溫下臨界電流可達到1.66mA，最大光強度輸出可達到3.37mW。 我們並探討F-P模的位置與增益頂峰處之關係對於面射型雷射之影響，共設計了6nm、10nm、11nm、14nm、15nm不同的波長差距，發現當兩者相距14~15nm時，面射型雷射會有較佳的雷射特性。

The thesis mainly focuses on the study of fabrication techniques and characteristics of GaAs vertical cavity surface emitting lasers (VCSELs). We analyzed two types of lasers structures experimentally. One is oxide-confinement and the other is proton-implantation. In process aspect, we had established the fabrication techniques of current-confined proton implanted VCSELs including exposure condition, development time, metal contact, and proton implantation energy. We also had established the fabrication techniques of oxide-confined VCSELs including oxidation temperature, N2 gas flow, water temperature, and oxidation time; as a result, both the two types of VCSELs were successfully fabricated, and for the oxide-confined VCSEL, the threshold current could reach to 1.66mA, and the maximum power could reach to 3.37mW. We also investigated the effect of mismatch between gain peak and F-P dip on VCSEL performances. Different offsets of 6nm, 10nm, 11nm, 14nm and 15nm in gain peak and F-P dip were designed and fabricated. Lower threshold current with less temperature sensitivity was obtained with a mismatch of 14~15nm.