Improved hot carrier reliability in strained-channel NMOSFETS with TEOS buffer layer

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DC 欄位	值	語言
dc.contributor.author	Lu, Ching-Sen	en_US
dc.contributor.author	Lin, Horng-Chih	en_US
dc.contributor.author	Lee, Yao-Jen	en_US
dc.contributor.author	Huang, Tiao-Yuan	en_US
dc.date.accessioned	2014-12-08T15:09:26Z	-
dc.date.available	2014-12-08T15:09:26Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-0918-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/7212	-
dc.identifier.uri	http://dx.doi.org/10.1109/RELPHY.2007.369562	en_US
dc.language.iso	en_US	en_US
dc.title	Improved hot carrier reliability in strained-channel NMOSFETS with TEOS buffer layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/RELPHY.2007.369562	en_US
dc.identifier.journal	2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL	en_US
dc.citation.spage	670	en_US
dc.citation.epage	671	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000246989600146	-
顯示於類別：	會議論文

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