氮化鎵光子晶體面射型雷射與類光子晶體面射型雷射之研究

Abstract

在這篇論文中，我們成功製作出氮化鎵光子晶體面射型雷射和氮化鎵類光子晶體面射型雷射，並研究其雷射特性。在氮化鎵光子晶體面射型雷射的研究中，不同以往四周圍包附空氣作為低折射率層，我們利用磊晶之氮化鎵與氮化鋁布拉格反射鏡取代掏空結構作為底部低折射率層，並在實驗中發現雷射的閥值能量密度有降低的趨勢；我們製作出了不同晶格類型的光子晶體包括了三角、四方以及蜂巢型晶格之面射型雷射，且量測其雷射特性。其中蜂巢晶格型光子晶體面射型雷射具有最低之閾值條件約1.6 mJ/cm2。此外利用多重散射法計算不同晶格之閾值條件並與量測結果搭配探討。理論計算結果與量測結果有一致的趨勢。而在氮化鎵類光子晶體面射型雷射的研究中，我們製作出了操作在不同能帶邊緣的氮化鎵類光子晶體面射型雷射，並研究操作在不同階能帶邊緣的雷射元件之閥值變化，由高階至低階能帶邊緣之閾值條件實驗結果有一遞減趨勢，此一結果有助於研究低閾值條件之類光子晶體面射型雷射。

In this thesis, we have demonstrated GaN-based photonic crystal surface emitting laser (PCSELs) and photonic quasi-crystal surface emitting laser (PQCSELs). Their laser characteristics were also measured and analyzed. For the subject of GaN-based PCSEL, different from the membrane type strucutre, the epitaxy distributed Bragg reflector (DBR) was used in GaN-based PCSELs. It can be observed that the threshold energy density of DBR-type PCSELs are lower than membrane-type PCSELs. Different lattice types of GaN-based PCSELs including hexagonal, square and honeycomb lattice were fabricated and characterized. The honeycomb lattice type PCSELs show the lowest threshold energy density of 1.6 mJ/cm2. In addition, the experimental results were similar with the simulation results which calculated by multiple scattering method. For the subject of GaN-based PQCSEL, we have fabricated PQCSELs which operated at different band-edge modes. The relation betwen threshold energy density and band-edge order was investigated. The experimental results shows the lower band-edge mode order, the lower threshold energy density. The result is helpful for development of the low thrshold photonic crystal surface emitting laser.