銻化鎵/砷化鎵量子環光子晶體微盤雷射之光特性分析

Abstract

近年來由於磊晶技術的突破,低維度的半導體量子結構研究快速蓬勃發展。由於低微度的電子侷限構造，使得高速的電子元件或高效能的發光、感測元件得以實現。具三維載子侷限的量子點、量子環更在量子物理與光通訊領域的應用上佔有舉足輕重的角色。一般常見的量子點、量子環系統其能帶分布使得載子均侷限在相同材料中。另一種令人驚豔的量子系統只侷限一種載子，另一種載子靠著庫倫力的吸引在周圍運動。這種特殊的載子侷限方式使得這一類型的量子系統具有許多一般載子侷限量子系統所沒有的特殊行為，例如：較長的光子生命週期，可涵蓋近紅外光、紅外光的發光波長，對工作溫度有更穩定的發光特性...等。利用這些特性，更穩定的發光元件得以予以實現。另一方面，由於這種分離式的載子侷限使得以這種量子系統作為增益介質的雷射元件難以實現，這也是目前這個領域所需克服的重大課題。在本篇論文當中，我們利用螢光光譜與時間解析螢光光譜分析，詳細的探討了銻化鎵/砷化鎵量子環系統的發光特性。由螢光光譜與時間解析螢光光譜分析中，我們發現銻化鎵/砷化鎵量子環具有良好的發光特性。利用具良好發光特性的量子環系統結合具高品質因子與低能態體積的光子晶體共振腔，我們成功的展示銻化鎵/砷化鎵量子環光子晶體雷射.由雷射特性的分析中我們可以發現，銻化鎵/砷化鎵量子環光子晶體雷射工作在近紅外光的範圍並具有較佳的熱穩定性、較長的光子生命週期，使得雷射元件具更加的發光穩定性並可應用在未來光積電路與生醫應用端。

Nowadays due to the epitaxial technique improvement, the low dimensional semiconductor structures have attracting much attention. As a result of low dimensional carriers confinement, the fast electronic device and high efficient light sources and detectors could be realized. The three-dimensional carriers confined quantum dots or quantum rings play important roles in the application of quantum physics and optical communication. The conventional quantum dot or quantum ring systems confined their carriers in the same material, which is the so-called type-I band alignment. Another attracting quantum system only confined one of the carriers in the dot or ring region, the other carrier act by coulomb force. This unique carrier confinement leads to some intriguing behavior, such as longer photon lifetime, emission wavelength covered the whole NIR and MIR region, more stable emission to thermal effect. With these characteristics, more stable and reliable light source could be realized. On the other hand, the separate carrier confined also cause weak luminescence and difficult to realize type-II quantum dot/quantum ring laser devices. How to improve the growth condition of type-II quantum dot/quantum ring is the essential issue in the topic. In this thesis, we investigated the optical properties of type-II GaSb/GaAs quantum rings by PL and TRPL measurement. With the recombination of high luminescent quantum rings as gain material and high Q/V photonic crystal nanobeam cavity, we succeed in demonstrating photonic crystal disk laser with type-II GaSb/GaAs quantum rings. With further investigate the optical properties of laser performance, we observed that lasing operates in the NIR region and has more thermal stability and longer photon lifetime, which are beneficial for photonic integrated circuit and bio-application.