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dc.contributor.author許惟明en_US
dc.contributor.authorHsu, Wei-Mingen_US
dc.contributor.author林志忠en_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2014-12-12T02:34:43Z-
dc.date.available2014-12-12T02:34:43Z-
dc.date.issued2012en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070052717en_US
dc.identifier.urihttp://hdl.handle.net/11536/72385-
dc.description.abstract本論文主要測量低頻雜訊隨著退火溫度的變化,另外還有隨著溫度的變化,希望可以藉此了解低頻雜訊的變化趨勢,另外還有ITO薄膜之中低頻雜訊的產生原因。本論文之中主要是以ITO薄膜之中的載子流動性變化來做解釋。zh_TW
dc.description.abstractWe discuss low- frequency noise as the annealing temperature and measure temperature changes. We try to explain carriers’ transmission characteristic in ITO films by mobility fluctuation.en_US
dc.language.isozh_TWen_US
dc.subject低頻雜訊zh_TW
dc.subject氧化銦錫zh_TW
dc.subject薄膜zh_TW
dc.subject1/f noiseen_US
dc.subjectIndium tin oxideen_US
dc.subjectITOen_US
dc.subjectthin filmen_US
dc.title掺錫氧化銦超薄膜之低頻雜訊研究zh_TW
dc.title1/f noise in micrometer-sized ITO ultrathin filmsen_US
dc.typeThesisen_US
dc.contributor.department物理研究所zh_TW
Appears in Collections:Thesis


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