含有銅奈米顆粒之矽奈米線之跳躍傳導行為研究

Abstract

我們本次實驗的材料是含有銅矽化合物奈米顆粒的矽奈米線，且銅矽化合物奈米顆粒(2~5 nm)是無序分布在奈米線當中。我們測量了電阻率對溫度的關係，我們發現電阻率越大的樣品，電子的傳導方式越接近activated law，而電阻率較小的樣品，我們發現電子的傳導方式越來越趨近Efros-Shklovskii T^(-1/2) variable range hopping (VRH)的機制，也間接證實了電子或許有co-tunneling現象。而對於電阻率最低的樣品而言，我們更進一步看到了符合Mott T^(-1/4) VRH的行為。對於未來的工作，若再進一步分析I-V curves將可以得到更明確的結論。

The material of our experiment is Si nanowires containing copper silicide nanoparticles, and the nanoparticles are randomly distributed in nanowires. We measured the correlation of resistivity and temperature. We found that for samples containing higher resistivity, electronic diffusion follows activated laws. For having lower resistivity samples, the transport properties follow Efros-Shklovskii T^(-1/2) variable range hopping (VRH) laws. This feature may verify electrons cotunneling in nanowires. For sample having the lowest resistivity, we further found the Mott T^(-1/4) VRH laws. As a future work, we can analyse I-V curves and perhaps we would get more definite conclusion.