完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ou, Yi-Ching | en_US |
dc.contributor.author | Wu, Jiun-Ji | en_US |
dc.contributor.author | Fang, Jiye | en_US |
dc.contributor.author | Jian, Wen-Bin | en_US |
dc.date.accessioned | 2014-12-08T15:09:29Z | - |
dc.date.available | 2014-12-08T15:09:29Z | - |
dc.date.issued | 2009-05-07 | en_US |
dc.identifier.issn | 1932-7447 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/jp900131h | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7241 | - |
dc.description.abstract | Semiconductor quantum dots with diameters of several to tens of nanometers have been largely synthesized through colloidal techniques for nanoscience exploration of quantum confinement, Coulomb staircase, and artificial-atom states in individual quantum dots and self-assembling growth behavior. Although charge transport of three-dimensional quantum dot arrays has been attempted for study on the micron scale, the electrical properties of a nanoscale array, self-assembled from a single quantum dot through a bottom-up procedure, have not been explored yet. We control growth parameters to self-assemble different sizes of PbSe quantum-dot arrays on flat gold surface for scanning tunneling spectroscopy measurements. The current-voltage curves of the arrays are analyzed using a double-barrier tunnel junction model to acquire the shunt capacitance between the array and the gold substrate. The increment of this capacitance is small as the particle number increases extremely from 1 to 40. Thus the array cannot be taken as a simple semiconductor island. We apply collective transport theory to exploration of electron tunneling and capacitive coupling between PbSe quantum dots in the array. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Probing Capacitive Coupling and Collective Transport in PbSe Quantum-Dot Arrays Using Scanning Tunneling Spectroscopy | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/jp900131h | en_US |
dc.identifier.journal | JOURNAL OF PHYSICAL CHEMISTRY C | en_US |
dc.citation.volume | 113 | en_US |
dc.citation.issue | 18 | en_US |
dc.citation.spage | 7887 | en_US |
dc.citation.epage | 7891 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000265687600062 | - |
dc.citation.woscount | 8 | - |
顯示於類別: | 期刊論文 |