完整後設資料紀錄
DC 欄位語言
dc.contributor.authorOu, Yi-Chingen_US
dc.contributor.authorWu, Jiun-Jien_US
dc.contributor.authorFang, Jiyeen_US
dc.contributor.authorJian, Wen-Binen_US
dc.date.accessioned2014-12-08T15:09:29Z-
dc.date.available2014-12-08T15:09:29Z-
dc.date.issued2009-05-07en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp900131hen_US
dc.identifier.urihttp://hdl.handle.net/11536/7241-
dc.description.abstractSemiconductor quantum dots with diameters of several to tens of nanometers have been largely synthesized through colloidal techniques for nanoscience exploration of quantum confinement, Coulomb staircase, and artificial-atom states in individual quantum dots and self-assembling growth behavior. Although charge transport of three-dimensional quantum dot arrays has been attempted for study on the micron scale, the electrical properties of a nanoscale array, self-assembled from a single quantum dot through a bottom-up procedure, have not been explored yet. We control growth parameters to self-assemble different sizes of PbSe quantum-dot arrays on flat gold surface for scanning tunneling spectroscopy measurements. The current-voltage curves of the arrays are analyzed using a double-barrier tunnel junction model to acquire the shunt capacitance between the array and the gold substrate. The increment of this capacitance is small as the particle number increases extremely from 1 to 40. Thus the array cannot be taken as a simple semiconductor island. We apply collective transport theory to exploration of electron tunneling and capacitive coupling between PbSe quantum dots in the array.en_US
dc.language.isoen_USen_US
dc.titleProbing Capacitive Coupling and Collective Transport in PbSe Quantum-Dot Arrays Using Scanning Tunneling Spectroscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp900131hen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume113en_US
dc.citation.issue18en_US
dc.citation.spage7887en_US
dc.citation.epage7891en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000265687600062-
dc.citation.woscount8-
顯示於類別:期刊論文


文件中的檔案:

  1. 000265687600062.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。