Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsu, M. C. | en_US |
dc.contributor.author | Chao, T. Y. | en_US |
dc.contributor.author | Cheng, Y. T. | en_US |
dc.contributor.author | Liu, C. M. | en_US |
dc.contributor.author | Chen, C. | en_US |
dc.date.accessioned | 2014-12-08T15:09:30Z | - |
dc.date.available | 2014-12-08T15:09:30Z | - |
dc.date.issued | 2009-05-01 | en_US |
dc.identifier.issn | 1536-125X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TNANO.2009.2015758 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7255 | - |
dc.description.abstract | The letter presents the fabrication and characterization of on-chip spiral inductors with Ni-anodic alumina oxide (Ni-AAO) nanocomposite core. Ni nanorods with 70 nm diameter are deposited and isolated in an AAO matrix to form a layer of nanocomposite on silicon substrate. About 3% inductance enhancement to the inductor with the nanocomposite core has been observed and the enhancement can be kept up more than 6 GHz. Because the proposed inductance enhancement scheme using ferromagnetic-AAO-based nanocomposite as inductor core employs a CMOS-compatible fabrication process with the characteristics that can be further improved, it is our belief that the scheme has a great potential application for future radio frequency integrated circuitry (RFIC) manufacture. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Anodic alumina oxide (AAO) | en_US |
dc.subject | inductance | en_US |
dc.subject | magnetic resonance | en_US |
dc.subject | Ni-anodic alumina oxide (Ni-AAO) nanocomposite core | en_US |
dc.subject | Ni nanorods | en_US |
dc.subject | quality (Q) factor | en_US |
dc.subject | spiral inductor | en_US |
dc.title | The Inductance Enhancement Study of Spiral Inductor Using Ni-AAO Nanocomposite Core | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TNANO.2009.2015758 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON NANOTECHNOLOGY | en_US |
dc.citation.volume | 8 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 281 | en_US |
dc.citation.epage | 285 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000266162900002 | - |
dc.citation.woscount | 6 | - |
Appears in Collections: | Articles |
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