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dc.contributor.authorHsu, M. C.en_US
dc.contributor.authorChao, T. Y.en_US
dc.contributor.authorCheng, Y. T.en_US
dc.contributor.authorLiu, C. M.en_US
dc.contributor.authorChen, C.en_US
dc.date.accessioned2014-12-08T15:09:30Z-
dc.date.available2014-12-08T15:09:30Z-
dc.date.issued2009-05-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2009.2015758en_US
dc.identifier.urihttp://hdl.handle.net/11536/7255-
dc.description.abstractThe letter presents the fabrication and characterization of on-chip spiral inductors with Ni-anodic alumina oxide (Ni-AAO) nanocomposite core. Ni nanorods with 70 nm diameter are deposited and isolated in an AAO matrix to form a layer of nanocomposite on silicon substrate. About 3% inductance enhancement to the inductor with the nanocomposite core has been observed and the enhancement can be kept up more than 6 GHz. Because the proposed inductance enhancement scheme using ferromagnetic-AAO-based nanocomposite as inductor core employs a CMOS-compatible fabrication process with the characteristics that can be further improved, it is our belief that the scheme has a great potential application for future radio frequency integrated circuitry (RFIC) manufacture.en_US
dc.language.isoen_USen_US
dc.subjectAnodic alumina oxide (AAO)en_US
dc.subjectinductanceen_US
dc.subjectmagnetic resonanceen_US
dc.subjectNi-anodic alumina oxide (Ni-AAO) nanocomposite coreen_US
dc.subjectNi nanorodsen_US
dc.subjectquality (Q) factoren_US
dc.subjectspiral inductoren_US
dc.titleThe Inductance Enhancement Study of Spiral Inductor Using Ni-AAO Nanocomposite Coreen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNANO.2009.2015758en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume8en_US
dc.citation.issue3en_US
dc.citation.spage281en_US
dc.citation.epage285en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000266162900002-
dc.citation.woscount6-
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