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dc.contributor.authorSu, Jen-Yien_US
dc.contributor.authorTseng, Sheng-Cheen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorWu, Po-Yien_US
dc.contributor.authorLee, Yueh-Tingen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:09:31Z-
dc.date.available2014-12-08T15:09:31Z-
dc.date.issued2009-05-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMTT.2009.2017242en_US
dc.identifier.urihttp://hdl.handle.net/11536/7262-
dc.description.abstractIn this paper, three kinds of Ka/Ku-band Gilbert mixers are demonstrated using 0.15-mu m AlGaAs/InGaAs pseudomorphic high electron mobility transistor technology. Thanks to the semiinsulating GaAs substrate, microwave passive components have a low-loss feature, and polyphase filters work up to higher frequencies. Highly accurate tantalum-nitride thin-film resistors utilized in polyphase filters result in perfect quadrature operation. Therefore, our proposed single-sideband up-converter operates at 15 GHz with a 63-dB sideband rejection ratio, and another 34-GHz in-phase/quadrature (I/Q) subharmonic down-converter reaches <0.4-dB magnitude and < 1 degrees phase errors. More than 50-dB local oscillator (LO) leakage suppression is achieved in the I/Q subharmonic mixer. On the other hand, a 40-GHz stacked-LO subharmonic mixer with a novel compensation technique is also proposed and demonstrated to improve LO speed and reduce the amount of transistors, as compared to previous work.en_US
dc.language.isoen_USen_US
dc.subjectCompensationen_US
dc.subjectdown-converteren_US
dc.subjectpolyphase filteren_US
dc.subjectpseudomorphic HEMT (pHEMT)en_US
dc.subjectquadratureen_US
dc.subjectsingle sideband (SSB)en_US
dc.subjectsubharmonicen_US
dc.subjectup-converteren_US
dc.titleKa/Ku-Band pHEMT Gilbert Mixers With Polyphase and Coupled-Line Quadrature Generatorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TMTT.2009.2017242en_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume57en_US
dc.citation.issue5en_US
dc.citation.spage1063en_US
dc.citation.epage1073en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000266040900006-
dc.citation.woscount4-
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