標題: Low-Ripple and Dual-Phase Charge Pump Circuit Regulated by Switched-Capacitor-Based Bandgap Reference
作者: Huang, Ming-Hsin
Fan, Po-Chin
Chen, Ke-Horng
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: Bandgap reference;charge pump;dual-phase power stage;fast transient response;output ripple;system-on-chip (SOC)
公開日期: 1-五月-2009
摘要: This paper proposes a low-ripple and dual-phase charge pump circuit regulated by switched-capacitor-based bandgap reference. Due to design of a buffer stage, a system can have better bandwidth and phase margin, and thus, the transient response and driving capability can be improved. Besides, the dual-phase control can reduce the output voltage ripple by means of only one closed-loop regulation in order to improve the power conversion efficiency. Besides, the proposed automatic body switching (ABS) circuit can efficiently drive the bulk of the power p-type MOSFETs to avoid leakage and potential latch-up. Usually, the regulated charge pump circuit needs a bandgap reference circuit to provide a temperature-independent reference voltage. The switched-capacitor-based bandgap reference circuit is utilized to regulate the output voltage. This chip was fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 mu m 3.3 V/5V 2P4M CMOS technology. The input voltage range varies from 2.9 to 5.5 V, and the output voltage is regulated at 5 V Experimental results demonstrate that the charge pump can provide 48 mA maximum load current without any oscillation problems.
URI: http://dx.doi.org/10.1109/TPEL.2008.2010546
http://hdl.handle.net/11536/7291
ISSN: 0885-8993
DOI: 10.1109/TPEL.2008.2010546
期刊: IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume: 24
Issue: 5-6
起始頁: 1161
結束頁: 1172
顯示於類別:期刊論文


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