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dc.contributor.authorLin, Fan-Yien_US
dc.contributor.authorTu, Shiou-Yuanen_US
dc.contributor.authorHuang, Chien-Chihen_US
dc.contributor.authorChang, Shu-Minen_US
dc.date.accessioned2014-12-08T15:09:34Z-
dc.date.available2014-12-08T15:09:34Z-
dc.date.issued2009-05-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2008.2010558en_US
dc.identifier.urihttp://hdl.handle.net/11536/7308-
dc.description.abstractIn this paper, nonlinear dynamics of semiconductor lasers under repetitive optical pulse injection are studied numerically. Different dynamical states, including pulsation and oscillation states, are found by varying the intensity and the repetition rate of the injection pulses. The laser is found to enter the chaotic pulsation (CP) states and chaotic oscillation (CO) states through individual period-doubling routes. Mapping and corresponding Lyapunov exponents of these dynamical states are plotted and examined in the parameter space. Moreover, the bandwidths of the chaos states found are investigated, where the bandwidths of the CP states observed at the strong injection regime are two to four times broader than the bandwidths of the CO states found at the weak injection regime. In this paper, frequency-locked states with different winding numbers, the ratio of the oscillation frequency, and the repetition frequency of the injection pulses are also studied. Both the cases for repetition frequency above and below the relaxation oscillation frequency are examined. The winding numbers of the frequency-locked states reveal a Devil's staircase structure, where a Farey tree showing the relations between the neighboring states is constructed.en_US
dc.language.isoen_USen_US
dc.subjectChaosen_US
dc.subjectnonlinear systemsen_US
dc.subjectsemiconductor lasersen_US
dc.titleNonlinear Dynamics of Semiconductor Lasers Under Repetitive Optical Pulse Injectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2008.2010558en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume15en_US
dc.citation.issue3en_US
dc.citation.spage604en_US
dc.citation.epage611en_US
dc.contributor.department應用數學系zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.identifier.wosnumberWOS:000266928700017-
dc.citation.woscount15-
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