利用含氮官能基修飾多晶矽奈米線場效電晶體表面對氨氣感測之影響

Abstract

本研究針對多晶矽奈米線電晶體作氨氣感測的探討，透過含氮官能基對元件作表面修飾，增加多晶矽奈米線對氨氣分子的吸附，進而改善元件對氨氣感測的效果。本實驗已證實含氮官能基修飾元件能偵測出0.5 ppm微量濃度的氨氣，並且隨著修飾材料結構中的含氮官能基數目增加，修飾元件的氨氣感測能力亦會提升。另外，實驗結果亦證實多晶矽奈米線電晶體在低濃度氨氣變化的感測中具有高解析的鑑別能力，因此非常適合運用在醫學中肝病病患的氨氣檢測。

In this thesis, the ammonia gas sensing of poly-Si nanowires FETs is discussed. Through the surface modification of the device by nitrogen-containing functional groups, the amount of ammonia adsorption on poly-Si nanowires is increase and the ammonia sensing ability is improved. In our study, the nitrogen-containing functional groups modified device can detect 0.5 ppm ammonia. Additionally, the more nitrogen-containing functional groups of the modified material exist, the better ammonia sensing ability of the modified device is. The experiments results also prove that the poly-Si nanowires FETs has good distinguishability at low ammonia concentration, therefore it is greatly suitable for application in ammonia detection of the patients with liver disease.