完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Ko Shing | en_US |
dc.contributor.author | Chen, Chen Chia | en_US |
dc.contributor.author | Sheu, Jeng Tzong | en_US |
dc.contributor.author | Li, Yaw-Kuan | en_US |
dc.date.accessioned | 2014-12-08T15:09:36Z | - |
dc.date.available | 2014-12-08T15:09:36Z | - |
dc.date.issued | 2009-04-24 | en_US |
dc.identifier.issn | 0925-4005 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.snb.2009.02.059 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7343 | - |
dc.description.abstract | Among biosensors of various types, the silicon nanowire field-effect transistor (SiNW-FET) is believed to be the most sensitive and powerful device for bio-applications. The principle of sensing is based on the variation of conductivity resulting from a disturbance of charge on the surface of the SiNW-FET, but this detection is feasible predominantly for charged analytes, such as a protein, DNA, antibody, virus etc. The objective of our work was to overcome this intrinsic weakness of a SiNW-FET and to develop a platform to detect steroids. For this purpose, we designed an engineered protein. Delta(5)-3-ketosteroid isomerase, to function as a steroid acceptor that was chemically modified with a carbon chain-linked 1,5-EDANS moiety, and further immobilized on the surface of a silicon nanowire. In the presence of a steroid, the negatively charged 1,5-EDANS moiety, which presumably occupies the steroid-binding site, is expelled and exposes to the nanowire surface. The electrical response produced from the 1,5-EDANS moiety is measured and the concentration is calculated accordingly. The sensitivity of this novel nano-bio-device can attain a femtomolar level. (C) 2009 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Biosensor | en_US |
dc.subject | Silicon nanowire field-effect transistor | en_US |
dc.subject | Delta(5)-3-Ketosteroid isomerase | en_US |
dc.subject | Steroid | en_US |
dc.title | Detection of an uncharged steroid with a silicon nanowire field-effect transistor | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.snb.2009.02.059 | en_US |
dc.identifier.journal | SENSORS AND ACTUATORS B-CHEMICAL | en_US |
dc.citation.volume | 138 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 148 | en_US |
dc.citation.epage | 153 | en_US |
dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:000265656300024 | - |
dc.citation.woscount | 15 | - |
顯示於類別: | 期刊論文 |