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dc.contributor.authorChang, Ko Shingen_US
dc.contributor.authorChen, Chen Chiaen_US
dc.contributor.authorSheu, Jeng Tzongen_US
dc.contributor.authorLi, Yaw-Kuanen_US
dc.date.accessioned2014-12-08T15:09:36Z-
dc.date.available2014-12-08T15:09:36Z-
dc.date.issued2009-04-24en_US
dc.identifier.issn0925-4005en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.snb.2009.02.059en_US
dc.identifier.urihttp://hdl.handle.net/11536/7343-
dc.description.abstractAmong biosensors of various types, the silicon nanowire field-effect transistor (SiNW-FET) is believed to be the most sensitive and powerful device for bio-applications. The principle of sensing is based on the variation of conductivity resulting from a disturbance of charge on the surface of the SiNW-FET, but this detection is feasible predominantly for charged analytes, such as a protein, DNA, antibody, virus etc. The objective of our work was to overcome this intrinsic weakness of a SiNW-FET and to develop a platform to detect steroids. For this purpose, we designed an engineered protein. Delta(5)-3-ketosteroid isomerase, to function as a steroid acceptor that was chemically modified with a carbon chain-linked 1,5-EDANS moiety, and further immobilized on the surface of a silicon nanowire. In the presence of a steroid, the negatively charged 1,5-EDANS moiety, which presumably occupies the steroid-binding site, is expelled and exposes to the nanowire surface. The electrical response produced from the 1,5-EDANS moiety is measured and the concentration is calculated accordingly. The sensitivity of this novel nano-bio-device can attain a femtomolar level. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBiosensoren_US
dc.subjectSilicon nanowire field-effect transistoren_US
dc.subjectDelta(5)-3-Ketosteroid isomeraseen_US
dc.subjectSteroiden_US
dc.titleDetection of an uncharged steroid with a silicon nanowire field-effect transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.snb.2009.02.059en_US
dc.identifier.journalSENSORS AND ACTUATORS B-CHEMICALen_US
dc.citation.volume138en_US
dc.citation.issue1en_US
dc.citation.spage148en_US
dc.citation.epage153en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000265656300024-
dc.citation.woscount15-
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