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dc.contributor.authorChang, Hsiang-Szuen_US
dc.contributor.authorChen, Wen-Yenen_US
dc.contributor.authorHsu, Tzu-Minen_US
dc.contributor.authorHsieh, Tung-Poen_US
dc.contributor.authorChyi, Jen-Innen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.date.accessioned2014-12-08T15:09:36Z-
dc.date.available2014-12-08T15:09:36Z-
dc.date.issued2009-04-20en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3125222en_US
dc.identifier.urihttp://hdl.handle.net/11536/7354-
dc.description.abstractThis work explores the origins of nonzero multiphoton emission probability for quantum dots embedded in photonic crystal nanocavities using different excitation energies to inject excitons into either the GaAs barrier or the quantum-dot excited state. The detected multiphoton events are established to arise from both the recapture of excitons and background emissions from the wetting layer tail states. The exciton emission is analyzed using rate-equation calculations, which suggest that multiphoton emission is dominated by the recapture effect.en_US
dc.language.isoen_USen_US
dc.subjectexcitonsen_US
dc.subjectgallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectmicrocavitiesen_US
dc.subjectphotonic crystalsen_US
dc.subjectsemiconductor quantum dotsen_US
dc.titleOrigins of nonzero multiple photon emission probability from single quantum dots embedded in photonic crystal nanocavitiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3125222en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.citation.issue16en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000265823300066-
dc.citation.woscount2-
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