标题: | 藉由氮化铝层间钝化层之插入改善氮化矽氮化铝镓/氮化镓金属绝缘半导体高电子迁移率电晶体之漏电流及电流溃散效应 Reducing Leakage Current and Suppressing Current Slump of Si3N4 AlGaN/GaN MISHEMTs by Insertion of AlN Interfacial Passivation Layer |
作者: | 赖俊霖 Lai, Chung-Ling 张翼 马哲申 Chang, Yi Ma,Jer-Shen 照明与能源光电研究所 |
关键字: | 氮化镓;氮化铝;高电子迁移率电晶体;金属绝缘层半导体高电子迁移率电晶体;崩溃电压;电流溃散效应;漏电流;氮化铝镓/氮化镓;GaN;AlN;HEMT;MISHEMT;Breakdown voltage;Current Slump;Leakage Current;AlGaN/GaN |
公开日期: | 2013 |
摘要: | 氮化铝镓/氮化镓高电子迁移率电晶体元件已经被研究并证明其高功率开关应用之能力。为了减少元件的漏电流,金属-绝缘层-半导体的结构普遍被使用于氮化镓功率元件。本研究采用2 nm的氮化铝作为层间钝化层,可观察到藉由插入氮化铝层间钝化层减少氮化矽金属绝缘层半导体高电子迁移率电晶体元件的漏电流与迟滞及电流溃散的现象。氮化矽/氮化铝之金属绝缘层半导体高电子迁移率电晶体制作于矽基板上并采用闸极-汲极距离15 um的设计,此元件展现出汲极偏压在600 V时偏低的关闭状态闸极漏电4.7╳10-5 mA/mm和汲极偏压在600 V时偏低的关闭状态汲极漏电1.3╳10-3 mA/mm以及偏高的崩溃电压850V (在汲极漏电流10 uA/mm的条件下达成),其特定导通电阻为1.72 mΩ • cm2以及最佳评比效能值有420 MW • cm2,此实验结果显示氮化矽/氮化铝之金属绝缘层半导体高电子迁移率电晶体元件适用于高压应用。 AlGaN/GaN HEMTs devices have been investigated and demonstrated for their capabilities on high power switching applicaitons. In order to reduce leakage current of device, metal-insulator-semiconductor(MIS) structure is generally used in GaN power devices. In this study, we use 2 nm AlN as interfacial passivaiton layer. It can be observed that Lower hysteresis, lower leakage current, and lower current collapse of Si3N4 MISHEMT are achieved by insertion of AlN interfacial passivaiton layer. Si3N4/AlN MISHEMT on silicon substrate with gate-drain distance of 15 μm exhibited a low off-state gate leakage current of 4.7╳10-5 mA/mm under 600 V drain voltage bias, a low off-state drain leakage current of 1.3╳10-3 mA/mm under 600 V drain voltage bias. In addition, it exhibited a high breakdown voltage of 850 V (achieved at a drain leakage current of 10 uA/mm), a specific on-resistance of 1.72 mΩ • cm2, a high figure-of-merit (FOM = BV2/Ron,sp) of 420 MW • cm2. Si3N4/AlN MISHEMT has been demonstrated to be suitable for high voltage application. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT070058101 http://hdl.handle.net/11536/73671 |
显示于类别: | Thesis |