標題: | 氫還原暨硫化對硒化銅銦鎵太陽能電池的影響 The Effect of Hydrogen Reducing and Sulfur Passivation on the Cu(In,Ga)Se2 Solar Cells |
作者: | 陳冠宇 Chen, Kuan-Yu 張國明 電子工程學系 電子研究所 |
關鍵字: | 太陽能電池;硒化銅銦鎵;Solar Cells;CIGS;Hydrogen Reducing;Passivation |
公開日期: | 2013 |
摘要: | 本論文利用銅銦鎵前驅層和混入不同含量氫氣的硒蒸氣來當做銅銦鎵硒薄膜的硒化過程。然後將製作好的硒化銅銦鎵薄膜置入化學溶液中,進行表面鈍化的實驗。我們將研究不同比例的氫氣和不同種類的溶液對硒化銅銦鎵薄膜特性的影響。以SEM、XRD、EDS和XPS等儀器對薄膜進行表面形貌、晶體結構、組成成分及表面元素等分析。
接著我們將完成太陽能電池,其結構由上而下依序為鋁指叉狀電極/氧化鋅鋁/氧化鋅/硫化鎘/銅銦鎵硒/鉬背電極/納鹼玻璃,元件有效面積為 0.38 平方公分,並利用太陽光模擬系統量測元件效率、開路電壓、短路電流與填充因子等參數。
研究結果指出,硒化時通入混合15%氫氣的硒蒸氣且利用硫代乙醯胺溶液做表面鈍化的硒化銅銦鎵薄膜,製作成太陽能電池後,有著最佳的效率。其元件轉換效率可以達到11.8%, In this thesis, we used the CIGS thin films of selenization by CIG and Se vapor mixed the different contents of hydrogen. And then the CIGS thin films were placed into chemical solutions to carry out the experiments of surface passivation. We studied the effects of different contents of hydrogen and different type of solutions on CIGS thin film characteristics. SEM was used to observe the film’s morphology, crystalline phase and composition of the CIGS layer were determined by XRD and EDS analysis, and XPS was used to analyze the elements composition of the CIGS thin films surface. Afterwards, we completed solar cell, from top to bottom its structure was sequentially Al/AZO/ZnO/CdS/CIGS/Mo/SLG. The effective area of solar cell device was 0.38cm2. And solar spectrum simulate measurement system was used to measure device conversion efficiency, open circuit voltage, short-circuit current and fill factor etc. parameters. The experiment results indicated that the CIGS thin films selenized by CIG and Se vapor mixed 15% hydrogen and then the CIGS thin films was passivated by thioacetamide (TAM) liquid. After the above CIGS thin films were produced solar cell, it had the best efficiency. Its conversion efficiency of 11.8% can be achieved. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT070050155 http://hdl.handle.net/11536/74127 |
Appears in Collections: | Thesis |