探討砷化銦鋁/砷化銦/砷化銦鎵系統之磷化銦高電子遷移率電晶體之模擬研究

Abstract

本研究論文是使用Silvaco公司的模擬軟體來探討InAlAs/InGaAs/InP假型高電子遷移率電晶體在高頻的特性。此主要研究目的在於分析每層元件厚度的效應並且去優化此元件結構使之有最佳化。元件材料中顯示有最佳化的直流特性和射頻特性是相當重要的，像是汲極電流、轉導和電流截止頻率都從這些模擬結果中被萃取出來。 然而，模擬元件的真正意義在於首先必須要知道元件中的特性，才能找出適合的模型來模擬元件，再者對模型參數做校準使模擬值趨近於實際值。這對未來開發InAlAs/InGaAs/InP系統的元件有相當大的幫助和貢獻。

In my research thesis, to study high frequency of characteristics InAlAs / InGaAs/InP pHEMT have been simulated by using Silvaco software. The main objective of research is to study the effects of variations of supply layer thicknesses and then it has optimization to change the device structure. The important of DC and RF parameters such as drain current, transconductance and current gain cut off frequency are extracted from these simulation results which that device material exhibits optimized performance. However, the simulation device of true meaning is necessary to understand the device characteristics and then can find suitable models to simulate device, furthermore, to make calibration of the model parameters could match simulated results with the measured results. It is important to develop the InAlAs / InGaAs /InP systems device with considerable assistance and contribution in the future.