Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yao, I-Chuan | en_US |
dc.contributor.author | Lin, Pang | en_US |
dc.contributor.author | Tseng, Tseung-Yuen | en_US |
dc.date.accessioned | 2014-12-08T15:09:45Z | - |
dc.date.available | 2014-12-08T15:09:45Z | - |
dc.date.issued | 2009-03-25 | en_US |
dc.identifier.issn | 0957-4484 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/20/12/125202 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7464 | - |
dc.description.abstract | The ZnO nanorods on ZnO/Si substrates were synthesized by using the low temperature growth aqueous solution method. The chemical and plasma etching treatments were carried out on the as-grown ZnO nanorods to provide the nanorods with various tip angles. The crystal structure and morphology of the ZnO nanorods were examined by x-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM), respectively. The nanorods grew along the [ 0001] direction and had various tip angles formed after the above etching processes. The field emission properties of the ZnO nanorods with tip angles of 110 degrees and 85 degrees are: the turn-on electric fields (at the current density of 10 mu A cm(-2)) are about 3.03 and 1.70 V mu m(-1), respectively, while field enhancement factors are 1972 and 3513, respectively. The lifetime measurement result indicates the turn-on field of the ZnO nanostructures reaches a stable value during 1000 cycle times. The enhanced field emission properties are believed to benefit from decreased tip angle of the nanorod emitter. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Nanotip fabrication of zinc oxide nanorods and their enhanced field emission properties | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0957-4484/20/12/125202 | en_US |
dc.identifier.journal | NANOTECHNOLOGY | en_US |
dc.citation.volume | 20 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000263891400003 | - |
dc.citation.woscount | 25 | - |
Appears in Collections: | Articles |
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