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dc.contributor.authorYao, I-Chuanen_US
dc.contributor.authorLin, Pangen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:09:45Z-
dc.date.available2014-12-08T15:09:45Z-
dc.date.issued2009-03-25en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/20/12/125202en_US
dc.identifier.urihttp://hdl.handle.net/11536/7464-
dc.description.abstractThe ZnO nanorods on ZnO/Si substrates were synthesized by using the low temperature growth aqueous solution method. The chemical and plasma etching treatments were carried out on the as-grown ZnO nanorods to provide the nanorods with various tip angles. The crystal structure and morphology of the ZnO nanorods were examined by x-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM), respectively. The nanorods grew along the [ 0001] direction and had various tip angles formed after the above etching processes. The field emission properties of the ZnO nanorods with tip angles of 110 degrees and 85 degrees are: the turn-on electric fields (at the current density of 10 mu A cm(-2)) are about 3.03 and 1.70 V mu m(-1), respectively, while field enhancement factors are 1972 and 3513, respectively. The lifetime measurement result indicates the turn-on field of the ZnO nanostructures reaches a stable value during 1000 cycle times. The enhanced field emission properties are believed to benefit from decreased tip angle of the nanorod emitter.en_US
dc.language.isoen_USen_US
dc.titleNanotip fabrication of zinc oxide nanorods and their enhanced field emission propertiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/20/12/125202en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume20en_US
dc.citation.issue12en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000263891400003-
dc.citation.woscount25-
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