利用快速熱退火技術增進金屬誘發側向結晶的速率

Abstract

在本研究中，主要的重點就是探討利用快速熱退火進行金屬誘發側向結晶。藉著改變快速熱退火各個不同的參數，如溫度、持溫時間、升溫速率，來探討哪些因素影響複晶矽的成長。接下來，選取適合的參數來製作元件，並與以爐管製程的元件做比較。 我們發現在550℃的溫度下，利用快速熱退火成長複晶矽，比爐管退火在複晶矽成長速率的表現上快上將近十倍。但是在電性上的表現，快速熱退火製程的略差於爐管製程。而在改變不同快速熱退火的參數上，溫度越高成長速率越快，但飽和長度越短；而在同樣溫度同樣退火時間下，週期數越多的，成長速率則越快；而在升溫速率方面，則沒有明顯的影響。

In this study，the major point is that metal-induced lateral crystallization process using Rapid thermal annealing was investigated。We discuss which factors affect the growth of polycrystalline silicon （poly-Si） by different RTA conditions such as temperature、during time and ramping rate。Then we select a suitable condition for device fabrication，and compare to device with furnace annealing process。

We discover that the growth rate of poly-Si by RTA at 550℃ is almost ten times than that by furnace annealing at 550℃。But the electric preformance of RTA process is inferior to that of furnace annealing process slightly。And under different RTA conditions：the higer temperature cause faster growth rate，but shorter saturation length ；under the same temperature and annealing time，the more numbers of cycle cause faster growth rate；And ramping rate do not affect growth rate obviously。