標題: Growth of free-standing GaN layer on Si(111) substrate
作者: Yang, Tsung Hsi
Ku, Jui Tai
Chang, Jet-Rung
Shen, Shih-Guo
Chen, Yi-Cheng
Wong, Yuen Yee
Chou, Wu Ching
Chen, Chien-Ying
Chang, Chun-Yen
材料科學與工程學系
電子工程學系及電子研究所
友訊交大聯合研發中心
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
關鍵字: Funnel-like nano-rods;Free-standing GaN;RF-plasma molecular beam epitaxy;Metalorganic chemical vapor deposition
公開日期: 15-Mar-2009
摘要: This investigation demonstrates the epitaxial growth of a free-standing GaN layer on Si(1 1 1) using a funnel-like GaN nano-rod buffer structure. The funnel-like GaN nano-rods were directly grown on Si substrates by RF-plasma molecular beam epitaxy. Free-standing GaN layers were achieved through the coalescence of funnel-like GaN nano-rods by the metalorganic chemical vapor deposition. This study examines the structure, optical characteristics and stress of GaN nano-rods and free-standing GaN layers. The c-axis lattice constant of the strain-free Ga-face GaN layer on Si is 5.1844 angstrom, as determined by high-resolution X-ray diffraction. The fully relaxed band edge at 3.468 eV without deep-level emission around 2.3 eV, was revealed in a free-standing GaN layer on Si, using photoluminescence. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2008.10.099
http://hdl.handle.net/11536/7480
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2008.10.099
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 311
Issue: 7
起始頁: 1997
結束頁: 2001
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