以陽極氧化鋁模板在矽基材上輔助成長奈米結構材料

Abstract

本研究在矽基材上製備出不同參數的陽極氧化鋁(AAO)模板：分別使用草酸及硫酸兩種不同電解液得到不同孔洞大小兩種尺寸的奈米孔洞；改變陽極處理電壓調整孔洞間距；改變擴孔時間調整孔洞大小；改變第二階段陽極處理時間調整模板的深寬比。且沉積二氧化矽作為陽極處理的阻障層，經過黃光微影製程乾式蝕刻出圖案，達到選區陽極氧化鋁模板的結構。而為了利用陽極氧化鋁模板輔助成長奈米碳管(CNTs)，本研究在陽極氧化鋁與矽基材間鍍上一層鎳薄膜當作成長碳管的金屬觸媒，再以此為模板進行以乙烯與氫氣為製程氣體的熱化學氣相沉積法來合成奈米碳管，並量測其場發射特性。接著嘗試改變製程氣體流量，研究製程氣體對奈米碳管生長情況與場發射特性的影響。此外，本研究在陽極氧化鋁與矽基材間鍍上一層氮化鉭薄膜，使用陽極氧化鋁模板配合陽極氧化法在奈米孔洞底部合成出氧化鉭的奈米柱陣列。未來也將研究其場發射性質或高介電特性。

In this research, we fabricate the anodic aluminum oxide (AAO) templates of different parameters on the silicon substrates: In order to get nanopores with two different sizes, we use two kinds of electrolyte such as oxalic acid and sulfuric acid separately; to change the anodic voltage to adjust the inter-pore distance; to change the pore-widening time to adjust the pore size; to change the duration of the second anodic process to adjust the aspect ratio of templates. And we grow AAO templates selectively by depositing silicon oxide as the anodization barrier layer. In order to grow carbon nanotubes (CNTs) assisted by AAO templates, we deposit a Ni thin film between AAO and silicon substrate for catalyst in this research. We synthesize CNTs in the thermal CVD system using a process gas mixture of C2H4 and H2 in this template, and measure the field emission property of them. And then we study the influence of growth of CNTs and field emission properties by changing the process gas flows. Furthermore, we deposit a TaN thin film between AAO and silicon substrate. And then we synthesize TaOx nano-pillar arrays in the bottom of AAO nanopores by using the anodic oxidization process. The field emission and high dielectric properties of nano-pillar will be studied in the future.