標題: | Enhanced field-effect mobility in pentacene based organic thin-film transistors on polyacrylates |
作者: | Cheng, Jung-An Chuang, Chiao-Shun Chang, Ming-Nung Tsai, Yun-Chu Shieh, Han-Ping D. 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
關鍵字: | buffer layers;grain size;high-k dielectric thin films;hole traps;organic field effect transistors;organic semiconductors;polymer films;thin film transistors |
公開日期: | 15-Mar-2009 |
摘要: | We reported on organic thin-film transistors (OTFTs) with high dielectric constant polymer, poly(2,2,2-trifluoroethyl methacrylate) (PTFMA), as the gate dielectric. In top-contact OTFTs, the field-effect mobility was enhanced by applying a dielectric buffer layer poly(alpha-methylstyrene) to the bare PTFMA. After improving interfacial affinity within the active layer/dielectrics, deposited pentacene grain size and device performance were enhanced dramatically. The corresponding mobility, threshold voltage, and on/off current ratio were 0.70 cm(2) V(-1) s(-1), -10.5 V, and 5.4x10(5), respectively. The moderately improved interface also suppressed the hole-trapping effect, which led to less hysteresis and minimized threshold voltage shift. |
URI: | http://dx.doi.org/10.1063/1.3075873 http://hdl.handle.net/11536/7485 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.3075873 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 105 |
Issue: | 6 |
結束頁: | |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.