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dc.contributor.authorWu, Ming-Chengen_US
dc.contributor.authorLee, Chi-Shenen_US
dc.date.accessioned2014-12-08T15:09:47Z-
dc.date.available2014-12-08T15:09:47Z-
dc.date.issued2009-03-05en_US
dc.identifier.issn0025-5408en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.materresbull.2008.06.034en_US
dc.identifier.urihttp://hdl.handle.net/11536/7500-
dc.description.abstractA procedure to grow alpha-MoO(3) nanocrystals of rod and belt forms under mild conditions involved deposition onto a glass substrate via vapor transport with a water-soluble precursor. Scanning electron and transmission electron microscopic studies, selected-area electron diffraction and powder X-ray analyses indicate that these alpha-MoO(3) nanocrystals exhibit rod or belt forms that grow along [0 0 1] and became vertically aligned on the glass substrate. Such deposition is effective to form thin films of controllable size and density of coverage on varying the precursor concentration and the duration of deposition. (C) 2008 Published by Elsevier Ltd.en_US
dc.language.isoen_USen_US
dc.titlealpha-MoO(3) nanocrystals of controlled size on a glass substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.materresbull.2008.06.034en_US
dc.identifier.journalMATERIALS RESEARCH BULLETINen_US
dc.citation.volume44en_US
dc.citation.issue3en_US
dc.citation.spage629en_US
dc.citation.epage632en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department應用化學系分子科學碩博班zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Molecular scienceen_US
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